{"id":"https://openalex.org/W4293171035","doi":"https://doi.org/10.1002/cta.3418","title":"Write\u2010enhanced and radiation\u2010hardened SRAM for multi\u2010node upset tolerance in space\u2010radiation environments","display_name":"Write\u2010enhanced and radiation\u2010hardened SRAM for multi\u2010node upset tolerance in space\u2010radiation environments","publication_year":2022,"publication_date":"2022-08-24","ids":{"openalex":"https://openalex.org/W4293171035","doi":"https://doi.org/10.1002/cta.3418"},"language":"en","primary_location":{"id":"doi:10.1002/cta.3418","is_oa":false,"landing_page_url":"https://doi.org/10.1002/cta.3418","pdf_url":null,"source":{"id":"https://openalex.org/S92132303","display_name":"International Journal of Circuit Theory and Applications","issn_l":"0098-9886","issn":["0098-9886","1097-007X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"International Journal of Circuit Theory and Applications","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5063284983","display_name":"Qiang Zhao","orcid":"https://orcid.org/0000-0002-0278-5804"},"institutions":[{"id":"https://openalex.org/I143868143","display_name":"Anhui University","ror":"https://ror.org/05th6yx34","country_code":"CN","type":"education","lineage":["https://openalex.org/I143868143"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qiang Zhao","raw_affiliation_strings":["School of Intergrated Circuits Anhui University  Hefei 230601 China","School of Intergrated Circuits, Anhui University, Hefei, 230601 China"],"raw_orcid":"https://orcid.org/0000-0002-0278-5804","affiliations":[{"raw_affiliation_string":"School of Intergrated Circuits Anhui University  Hefei 230601 China","institution_ids":["https://openalex.org/I143868143"]},{"raw_affiliation_string":"School of Intergrated Circuits, Anhui University, Hefei, 230601 China","institution_ids":["https://openalex.org/I143868143"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018442480","display_name":"Hanwen Dong","orcid":null},"institutions":[{"id":"https://openalex.org/I143868143","display_name":"Anhui University","ror":"https://ror.org/05th6yx34","country_code":"CN","type":"education","lineage":["https://openalex.org/I143868143"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hanwen Dong","raw_affiliation_strings":["School of Intergrated Circuits Anhui University  Hefei 230601 China","School of Intergrated Circuits, Anhui University, Hefei, 230601 China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Intergrated Circuits Anhui University  Hefei 230601 China","institution_ids":["https://openalex.org/I143868143"]},{"raw_affiliation_string":"School of Intergrated Circuits, Anhui University, Hefei, 230601 China","institution_ids":["https://openalex.org/I143868143"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075966974","display_name":"Chunyu Peng","orcid":"https://orcid.org/0000-0003-2408-5048"},"institutions":[{"id":"https://openalex.org/I143868143","display_name":"Anhui University","ror":"https://ror.org/05th6yx34","country_code":"CN","type":"education","lineage":["https://openalex.org/I143868143"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chunyu Peng","raw_affiliation_strings":["School of Intergrated Circuits Anhui University  Hefei 230601 China","School of Intergrated Circuits, Anhui University, Hefei, 230601 China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Intergrated Circuits Anhui University  Hefei 230601 China","institution_ids":["https://openalex.org/I143868143"]},{"raw_affiliation_string":"School of Intergrated Circuits, Anhui University, Hefei, 230601 China","institution_ids":["https://openalex.org/I143868143"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017413053","display_name":"Wenjuan Lu","orcid":"https://orcid.org/0000-0001-6201-8589"},"institutions":[{"id":"https://openalex.org/I143868143","display_name":"Anhui University","ror":"https://ror.org/05th6yx34","country_code":"CN","type":"education","lineage":["https://openalex.org/I143868143"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wenjuan Lu","raw_affiliation_strings":["School of Intergrated Circuits Anhui University  Hefei 230601 China","School of Intergrated Circuits, Anhui University, Hefei, 230601 China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Intergrated Circuits Anhui University  Hefei 230601 China","institution_ids":["https://openalex.org/I143868143"]},{"raw_affiliation_string":"School of Intergrated Circuits, Anhui University, Hefei, 230601 China","institution_ids":["https://openalex.org/I143868143"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072637140","display_name":"Zhiting Lin","orcid":"https://orcid.org/0000-0002-3314-1606"},"institutions":[{"id":"https://openalex.org/I143868143","display_name":"Anhui University","ror":"https://ror.org/05th6yx34","country_code":"CN","type":"education","lineage":["https://openalex.org/I143868143"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhiting Lin","raw_affiliation_strings":["School of Intergrated Circuits Anhui University  Hefei 230601 China","School of Intergrated Circuits, Anhui University, Hefei, 230601 China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Intergrated Circuits Anhui University  Hefei 230601 China","institution_ids":["https://openalex.org/I143868143"]},{"raw_affiliation_string":"School of Intergrated Circuits, Anhui University, Hefei, 230601 China","institution_ids":["https://openalex.org/I143868143"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066523003","display_name":"Junning Chen","orcid":"https://orcid.org/0000-0001-7121-0994"},"institutions":[{"id":"https://openalex.org/I143868143","display_name":"Anhui University","ror":"https://ror.org/05th6yx34","country_code":"CN","type":"education","lineage":["https://openalex.org/I143868143"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Junning Chen","raw_affiliation_strings":["School of Intergrated Circuits Anhui University  Hefei 230601 China","School of Intergrated Circuits, Anhui University, Hefei, 230601 China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Intergrated Circuits Anhui University  Hefei 230601 China","institution_ids":["https://openalex.org/I143868143"]},{"raw_affiliation_string":"School of Intergrated Circuits, Anhui University, Hefei, 230601 China","institution_ids":["https://openalex.org/I143868143"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037391840","display_name":"Xiulong Wu","orcid":"https://orcid.org/0000-0002-5012-2570"},"institutions":[{"id":"https://openalex.org/I143868143","display_name":"Anhui University","ror":"https://ror.org/05th6yx34","country_code":"CN","type":"education","lineage":["https://openalex.org/I143868143"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Xiulong Wu","raw_affiliation_strings":["School of Intergrated Circuits Anhui University  Hefei 230601 China","School of Intergrated Circuits, Anhui University, Hefei, 230601 China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Intergrated Circuits Anhui University  Hefei 230601 China","institution_ids":["https://openalex.org/I143868143"]},{"raw_affiliation_string":"School of Intergrated Circuits, Anhui University, Hefei, 230601 China","institution_ids":["https://openalex.org/I143868143"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5037391840"],"corresponding_institution_ids":["https://openalex.org/I143868143"],"apc_list":{"value":3660,"currency":"USD","value_usd":3660},"apc_paid":null,"fwci":0.9718,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.73686608,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":98},"biblio":{"volume":"51","issue":"1","first_page":"398","last_page":"409"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10018","display_name":"Advancements in Battery Materials","score":0.9965000152587891,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9962000250816345,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.8786357641220093},{"id":"https://openalex.org/keywords/upset","display_name":"Upset","score":0.7329464554786682},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.7007454633712769},{"id":"https://openalex.org/keywords/radiation","display_name":"Radiation","score":0.6427191495895386},{"id":"https://openalex.org/keywords/charge-sharing","display_name":"Charge sharing","score":0.6277089715003967},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.5734208822250366},{"id":"https://openalex.org/keywords/single-event-upset","display_name":"Single event upset","score":0.5534142851829529},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.5369232892990112},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5217131972312927},{"id":"https://openalex.org/keywords/radiation-hardening","display_name":"Radiation hardening","score":0.48934024572372437},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.4267342686653137},{"id":"https://openalex.org/keywords/soft-error","display_name":"Soft error","score":0.424233078956604},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.35085394978523254},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.34264564514160156},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.32691389322280884},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3094647526741028},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.2783472537994385},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.19288980960845947},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14921829104423523},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.12138476967811584},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.11820533871650696},{"id":"https://openalex.org/keywords/statistics","display_name":"Statistics","score":0.07196289300918579}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.8786357641220093},{"id":"https://openalex.org/C2778002589","wikidata":"https://www.wikidata.org/wiki/Q2406791","display_name":"Upset","level":2,"score":0.7329464554786682},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7007454633712769},{"id":"https://openalex.org/C153385146","wikidata":"https://www.wikidata.org/wiki/Q18335","display_name":"Radiation","level":2,"score":0.6427191495895386},{"id":"https://openalex.org/C2781179661","wikidata":"https://www.wikidata.org/wiki/Q5074272","display_name":"Charge sharing","level":3,"score":0.6277089715003967},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.5734208822250366},{"id":"https://openalex.org/C2780073065","wikidata":"https://www.wikidata.org/wiki/Q1476733","display_name":"Single event upset","level":3,"score":0.5534142851829529},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.5369232892990112},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5217131972312927},{"id":"https://openalex.org/C119349744","wikidata":"https://www.wikidata.org/wiki/Q3026015","display_name":"Radiation hardening","level":3,"score":0.48934024572372437},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.4267342686653137},{"id":"https://openalex.org/C154474529","wikidata":"https://www.wikidata.org/wiki/Q1658917","display_name":"Soft error","level":2,"score":0.424233078956604},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.35085394978523254},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.34264564514160156},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.32691389322280884},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3094647526741028},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.2783472537994385},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.19288980960845947},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14921829104423523},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.12138476967811584},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.11820533871650696},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.07196289300918579},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1002/cta.3418","is_oa":false,"landing_page_url":"https://doi.org/10.1002/cta.3418","pdf_url":null,"source":{"id":"https://openalex.org/S92132303","display_name":"International Journal of Circuit Theory and Applications","issn_l":"0098-9886","issn":["0098-9886","1097-007X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"International Journal of Circuit Theory and Applications","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G8905193691","display_name":null,"funder_award_id":"62104002","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G8923574658","display_name":null,"funder_award_id":"2018YFB2202803","funder_id":"https://openalex.org/F4320335777","funder_display_name":"National Key Research and Development Program of China"},{"id":"https://openalex.org/G985897707","display_name":null,"funder_award_id":"61804001","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320335777","display_name":"National Key Research and Development Program of China","ror":null}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":32,"referenced_works":["https://openalex.org/W2027893934","https://openalex.org/W2030501553","https://openalex.org/W2033453286","https://openalex.org/W2089197452","https://openalex.org/W2093138466","https://openalex.org/W2138111642","https://openalex.org/W2143137068","https://openalex.org/W2155153274","https://openalex.org/W2157210151","https://openalex.org/W2303552178","https://openalex.org/W2494978579","https://openalex.org/W2578302800","https://openalex.org/W2737640031","https://openalex.org/W2782053880","https://openalex.org/W2805686413","https://openalex.org/W2897553417","https://openalex.org/W2901644239","https://openalex.org/W2977558241","https://openalex.org/W2990692158","https://openalex.org/W3000390348","https://openalex.org/W3003557214","https://openalex.org/W3005034829","https://openalex.org/W3117854465","https://openalex.org/W3128557038","https://openalex.org/W3137664271","https://openalex.org/W3162523375","https://openalex.org/W3174797530","https://openalex.org/W3183821998","https://openalex.org/W3191703988","https://openalex.org/W4206694635","https://openalex.org/W4210410918","https://openalex.org/W4221121827"],"related_works":["https://openalex.org/W2622269177","https://openalex.org/W1523508240","https://openalex.org/W2102538861","https://openalex.org/W2086616086","https://openalex.org/W2023659251","https://openalex.org/W2546663484","https://openalex.org/W2160088500","https://openalex.org/W4241240665","https://openalex.org/W2060756716","https://openalex.org/W2012451149"],"abstract_inverted_index":{"Summary":[0],"As":[1],"transistor":[2],"feature":[3],"size":[4],"is":[5,35,57],"scaling":[6],"down,":[7],"the":[8,20,72,87,101,121],"probability":[9],"of":[10,19,39,86,100],"charge":[11,33],"sharing":[12,34],"in":[13,42,120],"a":[14,36,51],"space\u2010radiation":[15],"environment":[16],"increases":[17],"because":[18],"reduced":[21],"distance":[22],"between":[23],"adjacent":[24],"transistors.":[25],"The":[26,114],"single\u2010event":[27],"multiple\u2010node":[28],"upset":[29],"(SEMNU)":[30],"caused":[31],"by":[32],"major":[37],"source":[38],"data":[40],"errors":[41],"high\u2010density":[43],"static":[44],"random\u2010access":[45],"memory":[46],"(SRAM).":[47],"In":[48],"this":[49,106],"paper,":[50],"radiation\u2010hardened":[52],"SRAM":[53],"using":[54],"polarity":[55],"hardening":[56],"proposed.":[58],"Compared":[59],"to":[60],"other":[61],"cells":[62],"(RHPD\u201012T,":[63],"RSP14T,":[64],"SEA14T,":[65],"We\u2010Quatro,":[66],"QUCCE12T,":[67],"SARP12T,":[68],"SIS10T,":[69],"and":[70,84,90,98],"12T),":[71],"proposed":[73,115],"RHC\u201014T":[74],"cell":[75,116],"saves":[76],"8.47%,":[77],"91.34%,":[78],"162.71%,":[79],"\u201020.63%,":[80],"\u221220.50%,":[81],"113.18%,":[82],"63.27%,":[83],"20.60%":[85],"read\u2010delay":[88],"time":[89],"7.96%,":[91],"66.17%,":[92],"68.16%,":[93],"57.71%,":[94],"22.39%,":[95],"12.44%,":[96],"1,010.45%,":[97],"13.43%":[99],"write\u2010delay":[102],"time,":[103],"respectively.":[104],"Moreover,":[105],"excellent":[107],"performance":[108],"entails":[109],"only":[110],"minimal":[111],"power":[112],"consumption.":[113],"can":[117],"work":[118],"well":[119],"radiation\u2010intensive":[122],"space":[123],"environment.":[124]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":6}],"updated_date":"2026-05-21T06:26:12.895304","created_date":"2025-10-10T00:00:00"}