{"id":"https://openalex.org/W4318953892","doi":"https://doi.org/10.1109/tcsii.2023.3241663","title":"Efficient Training Method for Memristor-Based Array Using 1T1M Synapse","display_name":"Efficient Training Method for Memristor-Based Array Using 1T1M Synapse","publication_year":2023,"publication_date":"2023-02-02","ids":{"openalex":"https://openalex.org/W4318953892","doi":"https://doi.org/10.1109/tcsii.2023.3241663"},"language":"en","primary_location":{"id":"doi:10.1109/tcsii.2023.3241663","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2023.3241663","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5053225991","display_name":"Renhai Feng","orcid":"https://orcid.org/0000-0001-7194-6889"},"institutions":[{"id":"https://openalex.org/I162868743","display_name":"Tianjin University","ror":"https://ror.org/012tb2g32","country_code":"CN","type":"education","lineage":["https://openalex.org/I162868743"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Renhai Feng","raw_affiliation_strings":["School of Electrical and Information Engineering, Tianjin University, Tianjin, China"],"raw_orcid":"https://orcid.org/0000-0001-7194-6889","affiliations":[{"raw_affiliation_string":"School of Electrical and Information Engineering, Tianjin University, Tianjin, China","institution_ids":["https://openalex.org/I162868743"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101955765","display_name":"Jiahang Li","orcid":"https://orcid.org/0000-0002-2617-2914"},"institutions":[{"id":"https://openalex.org/I162868743","display_name":"Tianjin University","ror":"https://ror.org/012tb2g32","country_code":"CN","type":"education","lineage":["https://openalex.org/I162868743"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jiahang Li","raw_affiliation_strings":["School of Electrical and Information Engineering, Tianjin University, Tianjin, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Information Engineering, Tianjin University, Tianjin, China","institution_ids":["https://openalex.org/I162868743"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057886296","display_name":"Sheng Xie","orcid":"https://orcid.org/0000-0003-0754-4134"},"institutions":[{"id":"https://openalex.org/I162868743","display_name":"Tianjin University","ror":"https://ror.org/012tb2g32","country_code":"CN","type":"education","lineage":["https://openalex.org/I162868743"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Sheng Xie","raw_affiliation_strings":["School of Electrical and Information Engineering, Tianjin University, Tianjin, China"],"raw_orcid":"https://orcid.org/0000-0003-0754-4134","affiliations":[{"raw_affiliation_string":"School of Electrical and Information Engineering, Tianjin University, Tianjin, China","institution_ids":["https://openalex.org/I162868743"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5030290617","display_name":"Xurui Mao","orcid":null},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210091786","display_name":"State Key Laboratory on Integrated Optoelectronics","ror":"https://ror.org/00g102351","country_code":"CN","type":"facility","lineage":["https://openalex.org/I194450716","https://openalex.org/I19820366","https://openalex.org/I4210091786","https://openalex.org/I4210149211","https://openalex.org/I99065089"]},{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xurui Mao","raw_affiliation_strings":["State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China"],"raw_orcid":"https://orcid.org/0000-0002-5261-8369","affiliations":[{"raw_affiliation_string":"State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I4210091786","https://openalex.org/I19820366","https://openalex.org/I4210149211"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.2776,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.78938887,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"70","issue":"7","first_page":"2410","last_page":"2414"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11601","display_name":"Neuroscience and Neural Engineering","score":0.9939000010490417,"subfield":{"id":"https://openalex.org/subfields/2804","display_name":"Cellular and Molecular Neuroscience"},"field":{"id":"https://openalex.org/fields/28","display_name":"Neuroscience"},"domain":{"id":"https://openalex.org/domains/1","display_name":"Life Sciences"}},{"id":"https://openalex.org/T11992","display_name":"CCD and CMOS Imaging Sensors","score":0.9929999709129333,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/memristor","display_name":"Memristor","score":0.9654279351234436},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6958690881729126},{"id":"https://openalex.org/keywords/robustness","display_name":"Robustness (evolution)","score":0.6914716958999634},{"id":"https://openalex.org/keywords/crossbar-switch","display_name":"Crossbar switch","score":0.5767415165901184},{"id":"https://openalex.org/keywords/memistor","display_name":"Memistor","score":0.5449302792549133},{"id":"https://openalex.org/keywords/nonlinear-system","display_name":"Nonlinear system","score":0.46022871136665344},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4463101923465729},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.43798828125},{"id":"https://openalex.org/keywords/gradient-descent","display_name":"Gradient descent","score":0.4374038577079773},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.42161786556243896},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.41962915658950806},{"id":"https://openalex.org/keywords/artificial-neural-network","display_name":"Artificial neural network","score":0.3619927167892456},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.16234344244003296},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14762499928474426},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.09353455901145935},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.09172838926315308}],"concepts":[{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.9654279351234436},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6958690881729126},{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.6914716958999634},{"id":"https://openalex.org/C29984679","wikidata":"https://www.wikidata.org/wiki/Q1929149","display_name":"Crossbar switch","level":2,"score":0.5767415165901184},{"id":"https://openalex.org/C1895703","wikidata":"https://www.wikidata.org/wiki/Q6034938","display_name":"Memistor","level":4,"score":0.5449302792549133},{"id":"https://openalex.org/C158622935","wikidata":"https://www.wikidata.org/wiki/Q660848","display_name":"Nonlinear system","level":2,"score":0.46022871136665344},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4463101923465729},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.43798828125},{"id":"https://openalex.org/C153258448","wikidata":"https://www.wikidata.org/wiki/Q1199743","display_name":"Gradient descent","level":3,"score":0.4374038577079773},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.42161786556243896},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.41962915658950806},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.3619927167892456},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.16234344244003296},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14762499928474426},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09353455901145935},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.09172838926315308},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsii.2023.3241663","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2023.3241663","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.6600000262260437}],"awards":[{"id":"https://openalex.org/G1151656644","display_name":null,"funder_award_id":"62271349","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G1362308791","display_name":null,"funder_award_id":"JCYJ20160422093217170","funder_id":"https://openalex.org/F4320316880","funder_display_name":"Natural Science Foundation of Shenzhen City"},{"id":"https://openalex.org/G263087572","display_name":null,"funder_award_id":"520601220009","funder_id":"https://openalex.org/F4320336324","funder_display_name":"State Grid Shandong Electric Power Company"},{"id":"https://openalex.org/G5551005714","display_name":null,"funder_award_id":"61874104","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G6786216317","display_name":null,"funder_award_id":"61601309","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320316880","display_name":"Natural Science Foundation of Shenzhen City","ror":null},{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320336324","display_name":"State Grid Shandong Electric Power Company","ror":null}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W1578783943","https://openalex.org/W1636374761","https://openalex.org/W1964288235","https://openalex.org/W2010202670","https://openalex.org/W2035373681","https://openalex.org/W2039161462","https://openalex.org/W2040354407","https://openalex.org/W2045009304","https://openalex.org/W2066280488","https://openalex.org/W2085205847","https://openalex.org/W2094325813","https://openalex.org/W2517138139","https://openalex.org/W2613205562","https://openalex.org/W2613989746","https://openalex.org/W2627034335","https://openalex.org/W2743001015","https://openalex.org/W2751084147","https://openalex.org/W2762474013","https://openalex.org/W2889463071","https://openalex.org/W2923010225","https://openalex.org/W3031771821","https://openalex.org/W3105270833","https://openalex.org/W4200449252"],"related_works":["https://openalex.org/W2171130799","https://openalex.org/W4405514039","https://openalex.org/W3173413269","https://openalex.org/W4253441086","https://openalex.org/W3164474614","https://openalex.org/W2548135880","https://openalex.org/W2015477599","https://openalex.org/W2516929886","https://openalex.org/W3177379469","https://openalex.org/W2005875039"],"abstract_inverted_index":{"In":[0],"this":[1,51],"brief,":[2],"an":[3],"efficient":[4],"training":[5,68,74,93],"method":[6,56,75,94],"for":[7,48,66],"memristor-based":[8,26],"array":[9],"(crossbar)":[10],"with":[11],"one":[12,15],"transistor":[13],"and":[14,60,82,98],"memristor":[16,46],"(1T1M)":[17],"synapse":[18],"is":[19,42,64,76],"proposed,":[20],"which":[21],"enables":[22],"parallel":[23],"update":[24,63],"of":[25,72,91,100],"arrays":[27],"trained":[28],"by":[29],"stochastic":[30],"gradient":[31],"descent":[32],"within":[33],"two":[34],"steps.":[35],"Voltage":[36],"ThrEshold":[37],"Adaptive":[38],"Memristor":[39],"(VTEAM)":[40],"model":[41],"utilized":[43],"to":[44,95],"describe":[45],"characteristics":[47],"simulations.":[49],"On":[50],"basis,":[52],"circuit":[53],"parameters":[54],"optimization":[55],"compensating":[57],"the":[58,89],"asymmetric":[59],"nonlinear":[61],"weight":[62],"provided":[65],"better":[67],"results.":[69],"The":[70],"effectiveness":[71],"proposed":[73,92],"evaluated":[77],"on":[78],"OR,":[79],"AND":[80],"functions":[81],"digit":[83],"recognition":[84],"task.":[85],"Simulation":[86],"results":[87],"demonstrate":[88],"robustness":[90],"electrical":[96],"noise":[97],"imperfections":[99],"memristors.":[101]},"counts_by_year":[{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}