Abstract
The electrical conductivity of thin-film C60 has been changed by more than seven orders of magnitude with KrF (248nm) excimer-laser irradiation. Specific conductivities of 1 Ω−1 · cm−1 have been obtained. The onset of conductivity is consistent with a laser-induced metal-insulator phase transition. The threshold for KrF-laser ablation of C60 has been determined to be 20±2 mJ/cm2. This laser-induced process generates an all-carbon semiconductor-metallic junction which may have important technological applications.
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