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2020 – today
- 2025
[j7]Jung Rae Cho
, Seungwon Go, Jingyu Park, Tae Jun Yang, Seonhaeng Lee, Namhyun Lee, Dong Keun Lee, Yoon Kim, Myounggon Kang, Rock-Hyun Baek, Changhyun Kim, Sangwan Kim, Dae Hwan Kim:
Analysis of Bias Temperature Instability in Peripheral CMOS Devices for Low-Temperature Memory Applications. IEEE Access 13: 156497-156503 (2025)- [c2]Gang-Jun Kim, Taehun You, Sewon Jeon, Seung Hwan Kwak, Hwangju Song, Shinhyung Kim, Nam-Jae Kim, Jaeyeop Ahn, Hyuk Park, Seonhaeng Lee, Nam-Hyun Lee, Young Hoon Cho, Sang Won Hwang, Yuchul Hwang, Seungbum Ko, Sangwoo Pae:
Reliability Characterization Using Accelerated Methods of 1Tb 9th-Gen VNAND for TLC/QLC applications. IRPS 2025: 1-4 - [c1]Hyuk Park, Gang-Jun Kim, Nam-Jae Kim, Jaeyeop Ahn, Taehun You, Y. Kang, M. Yoon, Seonhaeng Lee, Nam-Hyun Lee, Sang Won Hwang, Yuchul Hwang, Seungbum Ko, Sangwoo Pae:
Novel Linear Model for OFF-State Stress Causing Stand-By Current of Advanced VNAND Chip. IRPS 2025: 1-6 - 2024
- [j6]Hyunseo You, Kihoon Nam, Jehyun An, Chanyang Park, Donghyun Kim, Seonhaeng Lee, Namhyun Lee, Rock-Hyun Baek:
Cryogenic Body Bias Effect in DRAM Peripheral and Buried-Channel-Array Transistor for Quantum Computing Applications. IEEE Access 12: 10988-10994 (2024) - [j5]Jun Hui Park, Jung Nam Kim, Seonhaeng Lee, Gang-Jun Kim, Namhyun Lee, Rock-Hyun Baek, Dae Hwan Kim, Changhyun Kim, Myounggon Kang, Yoon Kim:
Current-Voltage Modeling of DRAM Cell Transistor Using Genetic Algorithm and Deep Learning. IEEE Access 12: 23881-23886 (2024)
2010 – 2019
- 2013
- [j4]Seonhaeng Lee, Cheolgyu Kim, Hyeokjin Kim, Gang-Jun Kim, Ji-Hoon Seo, Donghee Son, Bongkoo Kang:
Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs. Microelectron. Reliab. 53(9-11): 1351-1354 (2013) - 2012
- [j3]Dongwoo Kim, Seonhaeng Lee, Cheolgyu Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang:
Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress. Microelectron. Reliab. 52(9-10): 1901-1904 (2012) - [j2]Seonhaeng Lee, Dongwoo Kim, Cheolgyu Kim, N.-H. Lee, Gang-Jun Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang:
Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs. Microelectron. Reliab. 52(9-10): 1905-1908 (2012) - [j1]Seonhaeng Lee, Dongwoo Kim, Cheolgyu Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang:
Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs. Microelectron. Reliab. 52(9-10): 1949-1952 (2012)
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