Mouhamad Alayan
Alexandre Levisse
Marc Bocquet
Marco Rios
Mouhamad Alayan
Mathieu Moreau
Etienne Nowak
Gabriel Molas
Elisa Vianello
David Atienza 0001
Jean-Michel Portal
Write Termination Circuits for RRAM: A Holistic Approach From Technology to Application Considerations.
109297-109308
2020
8
IEEE Access
https://doi.org/10.1109/ACCESS.2020.3000867
db/journals/access/access8.html#LevisseBRAMNMVA20
Mouhamad Alayan
Eloi Muhr
Alexandre Levisse
Marc Bocquet
Mathieu Moreau
Etienne Nowak
Gabriel Molas
Elisa Vianello
Jean-Michel Portal
Switching Event Detection and Self-Termination Programming Circuit for Energy Efficient ReRAM Memory Arrays.
748-752
2019
66-II
IEEE Trans. Circuits Syst. II Express Briefs
5
https://doi.org/10.1109/TCSII.2019.2908967
db/journals/tcas/tcasII66.html#AlayanMLBMNMVP19
Mouhamad Alayan
Elisa Vianello
Barbara De Salvo
Luca Perniola
Andrea Padovani
Luca Larcher
Correlated Effects on Forming and Retention of Al Doping in HfO<sub>2</sub>-Based RRAM.
23-30
2017
34
IEEE Des. Test
3
https://doi.org/10.1109/MDAT.2017.2682246
db/journals/dt/dt34.html#AlayanVSPPL17
M. Barlas
Boubacar Traore
Laurent Grenouillet
Stefania Bernasconi
Philippe Blaise
Mouhamad Alayan
Benoit Sklénard
Eric Jalaguier
Philippe Rodriguez
F. Mazen
E. Vilain
M. Guillermet
Simon Jeannot
Elisa Vianello
Luca Perniola
Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells.
168-171
2016
ESSDERC
https://doi.org/10.1109/ESSDERC.2016.7599613
conf/essderc/2016
db/conf/essderc/essderc2016.html#BarlasTGBBASJRM16
David Atienza 0001
M. Barlas
Stefania Bernasconi
Philippe Blaise
Marc Bocquet
Laurent Grenouillet
M. Guillermet
Eric Jalaguier
Simon Jeannot
Luca Larcher
Alexandre Levisse
F. Mazen
Gabriel Molas
Mathieu Moreau
Eloi Muhr
Etienne Nowak
Andrea Padovani
Luca Perniola
Jean-Michel Portal
Marco Rios
Philippe Rodriguez
Barbara De Salvo
Benoit Sklénard
Boubacar Traore
Elisa Vianello
E. Vilain