Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs.

Hidenori Ohyama

Joan Marc Rafí Eddy Simoen Kiyoteru Hayama Abdelkarim Mercha Francesca Campabadal Hidenori Ohyama Cor Claeys Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs. 1657-1663 2006 46 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2006.07.037 https://www.wikidata.org/entity/Q61825828 db/journals/mr/mr46.html#RafiSHMCOC06

Kiyoteru Hayama Kenichiro Takakura K. Shigaki Hidenori Ohyama Joan Marc Rafí Abdelkarim Mercha Eddy Simoen Cor Claeys Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation. 1731-1735 2006 46 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2006.07.063 db/journals/mr/mr46.html#HayamaTSORMSC06

Kiyoteru Hayama Kenichiro Takakura Hidenori Ohyama S. Kuboyama S. Matsuda Joan Marc Rafí Abdelkarim Mercha Eddy Simoen Cor Claeys Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs. 1376-1381 2005 45 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2005.07.024 db/journals/mr/mr45.html#HayamaTOKMRMSC05

Kiyoteru Hayama Kenichiro Takakura Hidenori Ohyama Abdelkarim Mercha Eddy Simoen Cor Claeys Joan Marc Rafí Michael Kokkoris Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation. 1721-1726 2004 44 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2004.07.063 db/journals/mr/mr44.html#HayamaTOMSCRK04

Hidenori Ohyama Eddy Simoen S. Kuroda Cor Claeys Y. Takami T. Hakata K. Kobayashi M. Nakabayashi Hiromi Sunaga Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle. 79-85 2001 41 Microelectron. Reliab. 1 https://doi.org/10.1016/S0026-2714(00)00073-1 db/journals/mr/mr41.html#OhyamaSKCTHKNS01

M. Nakabayashi Hidenori Ohyama Eddy Simoen M. Ikegami Cor Claeys K. Kobayashi M. Yoneoka K. Miyahara Reliability of polycrystalline silicon thin film resistors. 1341-1346 2001 41 Microelectron. Reliab. 9-10 db/journals/mr/mr41.html#NakabayashiOSICKYM01 https://doi.org/10.1016/S0026-2714(01)00214-1 https://www.wikidata.org/entity/Q127967951

Hidenori Ohyama M. Nakabayashi Eddy Simoen Cor Claeys T. Tanaka T. Hirao S. Onada K. Kobayashi Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation. 1443-1448 2001 41 Microelectron. Reliab. 9-10 db/journals/mr/mr41.html#OhyamaNSCTHOK01 https://doi.org/10.1016/S0026-2714(01)00182-2

Francesca Campabadal Cor Claeys T. Hakata Kiyoteru Hayama T. Hirao M. Ikegami K. Kobayashi Michael Kokkoris S. Kuboyama S. Kuroda S. Matsuda Abdelkarim Mercha K. Miyahara M. Nakabayashi S. Onada Joan Marc Rafí K. Shigaki Eddy Simoen Hiromi Sunaga Kenichiro Takakura Y. Takami T. Tanaka M. Yoneoka