Ricardo Revello
Konrad Seidel
David Lehninger
Franz Müller 0001
Yannick Raffel
Ayse Sünbül
Ricardo Revello
Raik Hoffmann
Sourav De 0002
Thomas Kämpfe
Maximilian Lederer
Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?
1-4
2023
IMW
https://doi.org/10.1109/IMW56887.2023.10145945
conf/imw2/2023
db/conf/imw2/imw2023.html#SeidelL0RSRHDKL23
Ayse Sünbül
Tarek Ali
Raik Hoffmann
Ricardo Revello
Yannick Raffel
Pardeep Duhan
David Lehninger
Kati Kühnel
Matthias Rudolph
Sebastian Oehler
Philipp Schramm
Malte Czernohorsky
Konrad Seidel
Thomas Kämpfe
Lukas M. Eng
Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions.
11-1
2022
IRPS
https://doi.org/10.1109/IRPS48227.2022.9764585
conf/irps/2022
db/conf/irps/irps2022.html#SunbulAHRRDLKRO22
Konrad Seidel
David Lehninger
Raik Hoffmann
Tarek Ali
Maximilian Lederer
Ricardo Revello
Konstantin Mertens
Kati Biedermann
Yukai Shen
Defu Wang
Matthias Landwehr
Andreas Heinig
Thomas Kämpfe
Hannes Mähne
Kerstin Bernert
Steffen Thiem
Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer.
355-356
2022
VLSI Technology and Circuits
https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830141
conf/vlsit/2022
db/conf/vlsit/vlsit2022.html#SeidelLHALRMBSW22
Tarek Ali
Kerstin Bernert
Kati Biedermann
Malte Czernohorsky
Sourav De 0002
Pardeep Duhan
Lukas M. Eng
Andreas Heinig
Raik Hoffmann
Thomas Kämpfe
Kati Kühnel
Matthias Landwehr
Maximilian Lederer
David Lehninger
Hannes Mähne
Konstantin Mertens
Franz Müller 0001
Sebastian Oehler
Yannick Raffel
Matthias Rudolph
Philipp Schramm
Konrad Seidel
Yukai Shen
Ayse Sünbül
Steffen Thiem
Defu Wang